Total-dose and single-event effects in switching DC/DC power converters

Author

Adell, P.C. ; Schrimpf, R.D. ; Choi, B.K. ; Holman, W.T. ; Attwood, J.P. ; Cirba, C.R. ; Galloway, K.F.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3217

Lastpage

3221

Abstract

Total-dose and single-event effects in discrete switching DC/DC power converters are examined using a combination of circuit measurements and simulations. The total-dose experiments focus on the response of the power MOSFET used as the switching element for the converters. The efficiencies of two different types of converters (boost and buck) degrade with increasing total dose, leading to eventual functional failure. The single-event transient response of the converters is determined by the response of the feedback control circuitry. Radiation response is studied using both electrical measurements and simulation techniques, and issues affecting circuit failure are identified.

Keywords

DC-DC power convertors; PWM power convertors; X-ray effects; circuit reliability; circuit simulation; failure analysis; power MOSFET; transient response; 100 krad; boost converters; buck converters; circuit failure; circuit measurements; circuit simulations; electrical measurements; feedback control circuitry response; functional failure; power MOSFET response; pulse width modulation; radiation response; single-event effects; single-event transient response; switching DC/DC power converters; switching element; total dose; total-dose effects; x-ray source; Circuit simulation; Degradation; Feedback circuits; Feedback control; MOSFET circuits; Power MOSFET; Power measurement; Switching circuits; Switching converters; Transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805425

Filename

1134285