Title :
Visible light emission from GaAs field-effect transistor
Author :
Mimura, Takashi ; Suzuki, Hidetake ; Fukuta, Masumi
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
Visible light radiation has been observed at the drain of a Schottky-barrier-gate GaAs microwave field-effect transistor (FET). The radiation takes place at the region where the drain current increases after saturation. The origin of the radiation has been attributed to impact ionization within the stationary high-field domain caused by negative differential mobility of n-GaAs.
Keywords :
Electrodes; Electrons; Equations; Gallium arsenide; Ionizing radiation; Lattices; Microwave FETs; Microwave devices; Potential energy; Shape;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1977.10727
