Title :
Variance noise and temperature fluctuations in semiconductors
Author :
Rahal, S. ; Chovet, A.
Author_Institution :
Institut National Polytechnique, ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ERA au CNRS no. 659, Grenoble, France
Abstract :
Experimental evidence is given which shows that very small temperature fluctuations are able to explain the variance noise, as well as the slopes of the power spectral density between 1.2 and 2, often observed from the low-frequency fluctuations in semiconductors.
Keywords :
electric noise measurement; electron device noise; semiconductor devices; low frequency fluctuations; power spectral density; semiconductors; temperature fluctuations; variance noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790192
