Title :
High-power pulsed GaAs double-drift hybrid-read impatt diodes for X-band
Author :
Berenz, J.J. ; Kinoshita, J. ; Hierl, T.L. ; Fank, F.B.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
Gallium-arsenide double-drift hybrid-Read Impatt diodes have been developed to deliver high peak and average powers in X-band. A peak power output of 35 W with 20% efficiency has been obtained at 8.3 GHz for 20% duty cycle. Peak power output of 32 W with 20% efficiency has been obtained at 8·6 GHz for a 25% duty cycle. Peak power output of 26 W with 21.5% efficiency has been obtained at 8.6. GHz for 33% duty cycle.
Keywords :
IMPATT diodes; 20% duty cycle; 20% efficiency; 35 W peak power output; 8.3 GHz; GaAs double drift hybrid Read IMPATT diodes; X-band; high power pulsed IMPATT diodes; performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790197
