DocumentCode
950660
Title
High-power pulsed GaAs double-drift hybrid-read impatt diodes for X-band
Author
Berenz, J.J. ; Kinoshita, J. ; Hierl, T.L. ; Fank, F.B.
Author_Institution
Varian Associates, Palo Alto, USA
Volume
15
Issue
10
fYear
1979
Firstpage
277
Lastpage
278
Abstract
Gallium-arsenide double-drift hybrid-Read Impatt diodes have been developed to deliver high peak and average powers in X-band. A peak power output of 35 W with 20% efficiency has been obtained at 8.3 GHz for 20% duty cycle. Peak power output of 32 W with 20% efficiency has been obtained at 8·6 GHz for a 25% duty cycle. Peak power output of 26 W with 21.5% efficiency has been obtained at 8.6. GHz for 33% duty cycle.
Keywords
IMPATT diodes; 20% duty cycle; 20% efficiency; 35 W peak power output; 8.3 GHz; GaAs double drift hybrid Read IMPATT diodes; X-band; high power pulsed IMPATT diodes; performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790197
Filename
4243222
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