Title :
Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
Author :
Wang, S. ; Hurst, J.B. ; Ma, F. ; Sidhu, R. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L. ; Huntington, A. ; Coldren, L.A. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
We report low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates. By either implementing a single heterostructure or using a pseudograded structure in the multiplication region, better control of spatial distribution of impact-ionization for both injected and feedback carriers can be achieved; localization of the carrier impact ionization process has resulted in very low excess noise.
Keywords :
III-V semiconductors; avalanche photodiodes; impact ionisation; indium compounds; optical noise; optical receivers; photodetectors; InAlAs; InP; InP substrates; avalanche photodiodes; carrier impact ionization process; feedback carriers; impact-ionization; injected carriers; low noise multiplication region structures; low-noise impact-ionization-engineered avalanche photodiodes; multiplication region; pseudograded structure; single heterostructure; spatial distribution; very low excess noise; Avalanche photodiodes; Charge carrier processes; Dark current; Feedback; Heterojunctions; Impact ionization; Indium compounds; Indium phosphide; Photonic band gap; Sun;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.804651
