Title :
Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
Author :
Bour, D.P. ; Treat, D.W. ; Thornton, R.L. ; Bringans, R.D. ; Paoli, T.L. ; Geels, R.S. ; Welch, D.F.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA) compressively strained Ga/sub 0.4/In/sub 0.6/P/(Al/sub 0.6/Ga/sub 0.4/)/sub 0.5/In/sub 0.5/P quantum wells and Al/sub 0.5/In/sub 0.5/P cladding layers, grown by low pressure organometallic vapor phase epitaxy. At room temperature, wavelengths as short as 617 nm have been achieved, with pulsed threshold current density of 2.5 kA/cm/sup 2/. As a result of greater electron confinement at longer wavelengths, the threshold, and its temperature sensitivity, are improved.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 20 AA; 617 to 640 nm; Al/sub 0.5/In/sub 0.5/P cladding layers; Ga/sub 0.4/In/sub 0.6/P-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P; MQW lasers; compressively strained; electron confinement; low pressure organometallic vapor phase epitaxy; operating characteristics; pulsed threshold current density; room temperature; semiconductors; short-wavelength; strained layer diode lasers; temperature sensitivity; thin multiple-quantum-well lasers; Artificial intelligence; Diodes; Electrons; Optical pulses; Quantum well devices; Quantum well lasers; Space vector pulse width modulation; Substrates; Temperature sensors; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
