• DocumentCode
    950851
  • Title

    C.C.D. transversal filter with a three-level polysilicon structure

  • Author

    Tanikawa, Kohei ; Ito, Yu ; Yamamoto, Takayuki ; Miura, Shun ; Miyamoto, Yutaka ; Kato, Shigeo

  • Author_Institution
    Fujitsu Laboratories Ltd., Kobe, Japan
  • Volume
    15
  • Issue
    11
  • fYear
    1979
  • Firstpage
    311
  • Lastpage
    312
  • Abstract
    A transversal filter with a three-level polysilicon technique is fabricated to improve the double-split-electrode filter. This approach has several advantages over the double-split electrode filter, such as better transfer efficiency, no charge redistribution, no edge effects and mask-misalignment-free structure.
  • Keywords
    charge-coupled device circuits; filters; integrated circuit technology; signal processing; CCD transversal filter; characteristics; integrated circuit technology; split electrode filter; three level poly Si structure; transfer efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790220
  • Filename
    4243278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=950851