Title :
C.C.D. transversal filter with a three-level polysilicon structure
Author :
Tanikawa, Kohei ; Ito, Yu ; Yamamoto, Takayuki ; Miura, Shun ; Miyamoto, Yutaka ; Kato, Shigeo
Author_Institution :
Fujitsu Laboratories Ltd., Kobe, Japan
Abstract :
A transversal filter with a three-level polysilicon technique is fabricated to improve the double-split-electrode filter. This approach has several advantages over the double-split electrode filter, such as better transfer efficiency, no charge redistribution, no edge effects and mask-misalignment-free structure.
Keywords :
charge-coupled device circuits; filters; integrated circuit technology; signal processing; CCD transversal filter; characteristics; integrated circuit technology; split electrode filter; three level poly Si structure; transfer efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790220
