Title :
Electrically pumped circular-grating surface-emitting DBR laser on InGaAs strained single-quantum-well structure
Author :
Fallahi, M. ; Chatenoud, F. ; Templeton, I.M. ; Dion, M. ; Wu, C.M. ; Delage, A. ; Barber, R.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
The authors demonstrate the fabrication and room temperature operation of an electrically pumped circular-grating surface-emitting distributed-Bragg-reflector laser. An InGaAs/GaAs single quantum well (SQW) graded-index separate confinement heterostructure (GRINSCH) structure was grown by one-step molecular beam epitaxy (MBE). Circular gratings were defined by focused ion beam lithography. The lasing wavelength was 942 nm, and the threshold current was 280 mA. This is the first demonstration of these lasers with no epitaxial regrowth.<>
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; ion beam lithography; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 280 mA; 942 nm; GRINSCH; GaAs; IR; InGaAs; MBE; SQW; circular-grating; distributed-Bragg-reflector laser; electrically pumped; epitaxial regrowthless; focused ion beam lithography; graded-index separate confinement heterostructure; lasing wavelength; one-step molecular beam epitaxy; room temperature operation; semiconductors; single quantum well; strained single-quantum-well structure; surface-emitting DBR laser; threshold current; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical device fabrication; Pump lasers; Quantum well lasers; Surface emitting lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
