• DocumentCode
    951032
  • Title

    CdTe/Langmuir-film m.i.s. structures

  • Author

    Petty, Michael C. ; Roberts, G.G.

  • Author_Institution
    University of Durham, Department of Applied Physics & Electronics, Durham, UK
  • Volume
    15
  • Issue
    12
  • fYear
    1979
  • Firstpage
    335
  • Lastpage
    336
  • Abstract
    Langmuir films based on cadmium stearate have been successfully deposited on to the surface of p-type CdTe. The measured C/V curves show, for the first time, the accumulation, depletion and weak-inversion regions typical of an ideal device. The G/V curves show a sharp peak in the depletion region at high frequencies which is thought to be due to losses at interface states. An initial estimate of the density yields an average value of 1011 states cm¿2.
  • Keywords
    Langmuir films; cadmium compounds; metal-insulator-semiconductor structures; C/V curves; CdTe/Langmuir film MIS structures; G/V curves; characteristics; interface states density 1011/cm2; p-type CdTe;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790238
  • Filename
    4243328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951032