• DocumentCode
    951060
  • Title

    Effects of emitter edge dislocations on the low frequency noise of silicon planar n-p-n transistors

  • Author

    Stojadinovi¿¿, N.D.

  • Author_Institution
    University of Ni¿, Facultly of Electronic Engineering, Ni¿, Yugoslavia
  • Volume
    15
  • Issue
    12
  • fYear
    1979
  • Firstpage
    340
  • Lastpage
    342
  • Abstract
    It is shown that the low-frequency noise in silicon planar n-p-n transistors is affected mainly by the emitter edge dislocations created during emitter phosphorus diffusion.
  • Keywords
    bipolar transistors; dislocations; electron device noise; LF noise; Si planar n-p-n transistors; bipolar transistors; dislocations generated during emitter P diffusion; electron device noise; emitter edge dislocations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790242
  • Filename
    4243338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951060