• DocumentCode
    951119
  • Title

    Detection of minority-carrier traps using transient spectroscopy

  • Author

    Brunwin, R. ; Hamilton, Blaine ; Jordan, Paul ; Peaker, A.R.

  • Author_Institution
    University of Manchester, Institute of Science & Technology, Manchester, UK
  • Volume
    15
  • Issue
    12
  • fYear
    1979
  • Firstpage
    349
  • Lastpage
    350
  • Abstract
    A technique for measuring the properties of deep states which trap minority carriers in the depletion region of a Schottky barrier is described. By combining minority-carrier capture and d.l.t.s. the method enables states to be separated according to their capture cross-sections as well as their emission properties. Results on GaP are described.
  • Keywords
    III-V semiconductors; Schottky effect; deep levels; gallium compounds; minority carriers; DLTS; GaP; Schottky barrier; deep level transient spectroscopy; depletion region; minority carrier traps detection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790248
  • Filename
    4243345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951119