DocumentCode :
951195
Title :
Asymmetric Y-branch tunable semiconductor laser with 1.0 THz tuning range
Author :
Kuznetsov, M. ; Verlangieri, P. ; Dentai, A.G. ; Joyner, C.H. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Volume :
4
Issue :
10
fYear :
1992
Firstpage :
1093
Lastpage :
1095
Abstract :
The tuning range of the traditional tunable lasers using distributed Bragg reflection is limited by the small refractive index change that can be induced in semiconductors. The authors report the design, fabrication, and characteristics of a novel asymmetric Y-branch (AYB) tunable laser. By geometrically leveraging the index change in these laser structures, they demonstrate, using a single current control, a discrete tuning range as large as 1.0 THz, access to 24 frequency channels, and tuning rates in excess of 100 GHz/mA. AYB lasers appear promising for applications requiring wide tuning range, fast electronic frequency access, and simple low current control.<>
Keywords :
laser tuning; optical design techniques; optical waveguides; refractive index; semiconductor growth; semiconductor lasers; 1.0 THz; asymmetric Y-branch; fast electronic frequency access; frequency channels; index change; laser characteristics; laser design; laser fabrication; laser structures; optical waveguides; simple low current control; single current control; tunable semiconductor laser; tuning range; tuning rates; Current control; Frequency; Laser transitions; Laser tuning; Optical design; Optical device fabrication; Optical reflection; Refractive index; Semiconductor lasers; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.163743
Filename :
163743
Link To Document :
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