Title :
Competing effects of well-barrier hole burning and nonlinear gain on the resonance characteristics of quantum-well lasers
Author :
Vassell, M.O. ; Sharfin, W.F. ; Rideout, William C. ; Lee, Johnson
Author_Institution :
GTE Lab., Waltham, MA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The effects of the quantum capture and release of carriers from quantum wells (QWs) on the resonance response of QW lasers are investigated from a model of well-barrier hole burning with built-in nonlinear gain. Significant similarities and contrasts with the conventional single-mode model are noted in both the large-signal transient behavior and in the small-signal resonance characteristics. The competition between well-barrier hole burning and nonlinear gain is explored by studying of time responses, phase portraits, frequency transfer functions; and contour maps of constant resonance frequency, damping rate, and 3-dB bandwidth in the parameter spaces defined by the nonlinear gain coefficient versus the ratio of relaxation times for capture and release of carriers by the wells. A systematic treatment of the well-barrier model is presented along with these predicted dynamical trends
Keywords :
laser modes; laser theory; optical hole burning; semiconductor device models; semiconductor lasers; transfer functions; QW lasers; built-in nonlinear gain; carrier capture; carrier release; constant resonance frequency; contour maps; damping rate; dynamical trends; frequency transfer functions; large-signal transient behavior; phase portraits; quantum capture; quantum-well lasers; resonance response; single-mode model; small-signal resonance characteristics; time responses; well-barrier hole burning; well-barrier model; Bandwidth; Damping; Laser modes; Optical modulation; Quantum well lasers; Resonance; Resonant frequency; Semiconductor lasers; Steady-state; Transfer functions;
Journal_Title :
Quantum Electronics, IEEE Journal of