Drift leakage current in AlGaInP quantum-well lasers

Author

Bour, David P. ; Treat, David W. ; Thornton, Robert L. ; Geels, Randall S. ; Welch, David F.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

29

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

1337

Lastpage

1343

Abstract

The temperature dependence of threshold current and quantum efficiency for Ga_xIn_1-xP (x=0.4, 0.6; λ=680, 633 nm) single 80-Å quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; semiconductor device models; semiconductor lasers; 633 nm; 680 nm; 80 Å; AlGaInP; GaInP; SQW; drift leakage current; electron leakage current; poor p-type conductivity; quantum efficiency; quantum-well lasers; semiconductors; single quantum well; temperature dependence; threshold current; Carrier confinement; DH-HEMTs; Electrons; Leakage current; Photonic band gap; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.236147

Filename

236147