A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 μm

Author

Kagawa, Toshiaki ; Kawamura, Yuichi ; Iwamura, Hidetoshi

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

29

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

1387

Lastpage

1392

Abstract

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; noise; semiconductor superlattices; 0.8 micron; 1.3 micron; 1.55 micron; 17 GHz; IR; InGaAsP-InAlAs; InP; MBE; absorption layer; electrode; flip-chip structure; gas source molecular beam epitaxy; incident light; light reflection; low multiplication factor; low-noise; photoabsorption layer; quantum efficiency; semiconductor growth; superlattice avalanche photodiode; superlattice multiplication region; transit time; wide-bandwidth; Absorption; Avalanche photodiodes; Electrodes; Fabrication; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical reflection; Substrates; Superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.236152

Filename

236152