Title :
Lasing characteristics for four-section MQW-DBR laser
Author :
Kunii, T. ; Matsui, Y. ; Ogawa, Y. ; Kamijoh, T.
Author_Institution :
Oki Electric Ind. Co. Ltd., Tokyo, Japan
Abstract :
A MQW-DBR laser with two active sections and low tuning efficiency has been developed. The device showed excellent lasing characteristics: a low threshold current of 10 mA, a high slope efficiency of 0.26 mW/mA, and a narrow linewidth of 280 kHz at P/sub out/=15 mW. A red-shift carrier-induced FM response was obtained by nonuniform current injection to two active sections. A flat FM response with wide bandwidth (>2 GHz) was confirmed. The linewidth broadening due to wavelength tuning was suppressed through the reduction of tuning efficiency. A continuous tuning range of 0.8 nm was observed while maintaining the linewidth below 4 MHz.<>
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser tuning; optical modulation; red shift; semiconductor lasers; spectral line breadth; 10 mA; 15 mW; 2 GHz; InGaAs-InGaAsP; active sections; continuous tuning range; flat FM response; four-section MQW-DBR laser; high slope efficiency; lasing characteristics; linewidth broadening; low threshold current; low tuning efficiency; narrow linewidth; nonuniform current injection; red-shift carrier-induced FM response; semiconductors; tuning efficiency; wavelength tuning; Distributed Bragg reflectors; Frequency; Laser tuning; Light sources; Optical tuning; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
