A very low-noise CMOS preamplifier for capacitive sensors

Author

Stefanelli, Bruno ; Bardyn, Jean-Paul ; Kaiser, Andreas ; Billet, Daniel

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Lille, France

Volume

28

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

971

Lastpage

978

Abstract

A CMOS preamplifier optimized for piezoelectric transducers is presented. The extensive use of CMOS-compatible lateral bipolar transistors (CLBTs) and careful layout leads to a very low noise along with good untrimmed DC and AC characteristics. These features make it competitive with bipolar and JFET realizations. In addition, long coaxial lines can be driven without significant alteration of performance using the two uncommitted on-chip buffers. This circuit was fabricated in a standard 3-μm p-well CMOS technology, opening perspectives to monolithic integration of data acquisition subsystems

Keywords

CMOS integrated circuits; electric sensing devices; instrumentation amplifiers; linear integrated circuits; piezoelectric transducers; preamplifiers; 3 micron; CMOS preamplifier; CMOS-compatible lateral bipolar transistors; capacitive sensors; low-noise; p-well CMOS technology; piezoelectric transducers; Billets; Bipolar transistors; CMOS technology; Capacitance; Capacitive sensors; Coaxial components; Data acquisition; Power amplifiers; Preamplifiers; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.236177

Filename

236177