Title :
GaAs power m.e.s.f.e.t.s. with a graded recess structure
Author :
Furutsuka, Takashi ; Higashisaka, Asamitsu ; Aono, Yoichi ; Takayama, Yoichiro ; Hasegawa, Fumio
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
A new recess structure device was developed to improve the field distrubution and therfore the performance of GaAs power m.e.s.f.e.t.s. The linear gain and the output power were improved by 1¿2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4.3 W with 3 dB associated gain at 11 GHz.
Keywords :
Schottky gate field effect transistors; solid-state microwave devices; 11 GHz; 6 GHz; GaAs; MESFET; associated gain; field distribution; graded recess structure; linear gain; microwave device; output power; performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790299
