• DocumentCode
    951615
  • Title

    GaAs power m.e.s.f.e.t.s. with a graded recess structure

  • Author

    Furutsuka, Takashi ; Higashisaka, Asamitsu ; Aono, Yoichi ; Takayama, Yoichiro ; Hasegawa, Fumio

  • Author_Institution
    Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
  • Volume
    15
  • Issue
    14
  • fYear
    1979
  • Firstpage
    417
  • Lastpage
    418
  • Abstract
    A new recess structure device was developed to improve the field distrubution and therfore the performance of GaAs power m.e.s.f.e.t.s. The linear gain and the output power were improved by 1¿2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4.3 W with 3 dB associated gain at 11 GHz.
  • Keywords
    Schottky gate field effect transistors; solid-state microwave devices; 11 GHz; 6 GHz; GaAs; MESFET; associated gain; field distribution; graded recess structure; linear gain; microwave device; output power; performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790299
  • Filename
    4243409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951615