• DocumentCode
    951763
  • Title

    Light-induced effects in GaAs f.e.t.s

  • Author

    Graffeuil, J. ; Rossel, P. ; Martinot, H.

  • Author_Institution
    Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
  • Volume
    15
  • Issue
    14
  • fYear
    1979
  • Firstpage
    439
  • Lastpage
    441
  • Abstract
    It is shown theoretically and experimentally that the variations of the d.c. and dynamic properties in a GaAs f.e.t. when a light beam strikes the transistor´s gate can be accounted for by an appropriate change in the gate-junction equivalent built-in voltage. A simple relationship connects this change with the variations of the light intensity.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; DC variation; FET; Fermi level split; GaAs; III-V semiconductors; Schottky junction gate; dynamic properties; light induced effects; light intensity; pinch off voltage; transconductance; transistor characteristics; voltage change;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790315
  • Filename
    4243425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951763