A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

Author

Liu, Hong-Zhi ; Lin, Che-Hung ; Chu, Chen-Kuo ; Huang, Hou-Kuei ; Houng, Mau-Phon ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

16

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

330

Lastpage

332

Abstract

In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; 1 W; 1 dB; 14 GHz; 14.2 dB; 630 mA; 8 V; AlGaAs-InGaAs-GaAs; Ku-band frequency; compact self-bias PHEMT; power amplifier MMIC; very small aperture terminal; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Microwave transistors; PHEMTs; Power amplifiers; Power generation; Ku-band; monolithic microwave integrated circuit (MMIC); power amplifier; pseudomorphic high electron mobility transistor (PHEMT);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.875627

Filename

1637485