• DocumentCode
    951813
  • Title

    Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs

  • Author

    Badawi, M.H. ; Akintunde, J.A. ; Sealy, B.J. ; Stephens, K.G.

  • Author_Institution
    University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
  • Volume
    15
  • Issue
    15
  • fYear
    1979
  • Firstpage
    447
  • Lastpage
    448
  • Abstract
    When semi-insulating GaAs samples are coated with pyrolytically deposited Si3N4 layers and subsequently irradiated with a Q-switched ruby laser with energy densities > 0.3 J/cm2, it is found that a thin layer (0.1¿0.25 ¿m) of the underlying GaAs substrates becomes n-type. This phenomenon may be the reason why, in previous work on laser annealing of donor implanted GaAs samples, the percentage electrical activity increased when samples were coated with Si3N4.
  • Keywords
    III-V semiconductors; annealing; encapsulation; gallium arsenide; laser beam applications; semiconductor doping; GaAs substrate surface becomes n-type; Q-switched ruby laser; Si3N4 encapsulating effect; electrical activity increase; energy densities >0.3 J/cm2; laser annealing behaviour of GaAs; pyrolytically deposited Si3N4 layers; semiinsulating GaAs samples;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790321
  • Filename
    4243434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=951813