Title :
An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
Author :
Jarndal, Anwar ; Kompa, Günter
Author_Institution :
Fachgebiet Hochfrequenztechnik, Kassel Univ., Germany
fDate :
6/1/2006 12:00:00 AM
Abstract :
The validity of the proposed small-signal model (SSM) and the developed extraction method in for large GaN devices is investigated. Extraction of parasitic elements is performed for different size devices to show the scaling of these elements with the gate width. The model shows a very good result for describing the parasitic distributed effect, which is considerable for large devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; element scaling; high power devices; parasitic element extraction; scalable large-signal; small-signal model; Aluminum gallium nitride; Capacitance; Extraterrestrial measurements; Fingers; Gallium nitride; HEMTs; Helium; MODFETs; Parameter extraction; Radio frequency; GaN high electron mobility transistor (HEMT); high power devices; small-signal model;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.875626
