DocumentCode
951818
Title
An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
Author
Jarndal, Anwar ; Kompa, Günter
Author_Institution
Fachgebiet Hochfrequenztechnik, Kassel Univ., Germany
Volume
16
Issue
6
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
333
Lastpage
335
Abstract
The validity of the proposed small-signal model (SSM) and the developed extraction method in for large GaN devices is investigated. Extraction of parasitic elements is performed for different size devices to show the scaling of these elements with the gate width. The model shows a very good result for describing the parasitic distributed effect, which is considerable for large devices.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; element scaling; high power devices; parasitic element extraction; scalable large-signal; small-signal model; Aluminum gallium nitride; Capacitance; Extraterrestrial measurements; Fingers; Gallium nitride; HEMTs; Helium; MODFETs; Parameter extraction; Radio frequency; GaN high electron mobility transistor (HEMT); high power devices; small-signal model;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2006.875626
Filename
1637486
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