Title :
InP-lnGaAsP planar avalanche photodiodes with self-guard-ring effect
Author :
Taguchi, Katsuhisa ; Matsumoto, Yuki ; Nishida, Keisuke
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Marked diode characteristics dependence on the distance between p-n junction and heterointerface in double heterojunction InP-InGaAsP planar a.p.d.s is described. In a diode with an optimised configuration, as high as 3000 maximum avalanche gain and less than 3×10¿6 A/cm2 dark-current density at 0.9 VB are achieved.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; InP-InGaAsP planar avalanche photodiodes; avalanche gain 3000; dark current density 3x10-6 A/cm2; diode characteristics; planar structure; self guard ring effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790326
