Title :
Low-power 100 Gbit/s selector IC using InP/InGaAs DHBTs
Author :
Arayashiki, Y. ; Ohkubo, Yuuki ; Amano, Yuto ; Takagi, A. ; Ejima, M. ; Matsuoka, Yasutaka
Author_Institution :
Core Technol. R&D Center, Anritsu Corp., Atsugi
Abstract :
A low-power 100 Gbit/s selector IC using InP DHBTs, which provides excellent high-frequency characteristics at a low bias condition, is reported. A novel design technique, which assists high-speed operation under a low supply voltage condition, is used. The selector IC achieves 100 Gbit/s operation with a power consumption as low as 345 mW.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; monolithic integrated circuits; HBT; InP-InGaAs; high-speed operation; low bias condition; low supply voltage condition; low-power selector IC; power consumption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081628
