DocumentCode
952046
Title
Temperature drift of modulation characteristics in semiconductor lasers
Author
Zaitse, D.F.
Author_Institution
Radio Tech. Inst., Acad. of Sci., Moscow, Russia
Volume
140
Issue
4
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
227
Lastpage
231
Abstract
The temperature dependences of the basic parameters of single-mode InGaAsP semiconductor lasers have been analysed with due regard for the Auger effect. Formulas have been derived for computing the temperature drifts of amplitude-frequency and phase-frequency characteristics (AFC, PFC) under direct high-frequency modulation to construct three-dimensional amplitude and phase surfaces. On the basis of the formulas derived, an analytical method has been designed for calculating the temperature drift of the AFC and PFC of semiconductors lasers under high-frequency modulation by small signals without any optical feedback
Keywords
Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; 3D amplitude surfaces; Auger effect; InGaAsP; amplitude-frequency; direct high-frequency modulation; modulation characteristics; phase surfaces; phase-frequency characteristics; semiconductor lasers; single-mode; small signals; temperature dependences; temperature drifts;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
236300
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