Title :
Erratum: Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C
Author :
Capasso, Federico ; Nahory, R.E. ; Pollack, M.A.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; impact ionisation; 4 to 5 x 105 V/cm electric field; GaAs; Impatt diodes; avalanche devices; free carrier impact ionisation rates; high operating temperatures; temperature dependence; temperatures between 20 and 200 degrees C;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790366
