Title :
Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators
Author :
Chen, Y. ; Zucker, J.E. ; Sauer, N.J. ; Chang, T.Y.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown that by increasing the Ga fraction and hence the tensile strain in the quantum well the electric-field-induced refractive index change in the TM polarization Delta n/sub TM/ can be made to approach that in the TE polarization Delta n/sub TE/. At 1.523 mu m, the ratio Delta n/sub TM// Delta n/sub TE/=1 for x=0.7 with a phase shift coefficient of 17.4 degrees /V-mm was achieved. Polarization independence was maintained over the entire range of reverse bias voltage.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; phase modulation; refractive index; semiconductor quantum wells; 1.523 micron; Ga fraction; IR; InGaAs-InGaAlAs; SQW; TE polarization; TM polarization; electric-field-induced refractive index change; multiple-quantum-well waveguides; phase shift coefficient; polarisation independence; polarisation independent phase modulation; quantum-well phase modulators; reverse bias voltage; semiconductors; tensile strain; Electron beams; Finite difference methods; Indium gallium arsenide; Optical polarization; Optical propagation; Optical waveguides; Phase modulation; Quantum wells; Semiconductor waveguides; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
