DocumentCode
952306
Title
Modelling the m.e.s.f.e.t. output nonlinearity
Author
Minasian, R.A.
Author_Institution
University of Melbourne, Department of Electrical Engineering, Parkville, Australia
Volume
15
Issue
17
fYear
1979
Firstpage
515
Lastpage
516
Abstract
Conditions governing the modelling of transductance and drain-conductance nonlinearities from measured data are investigated. A simple representation for regions close to pinch-off, corresponding to mixer operation, is obtained. Results of the modelling are compared to measurements on a typical 1 ¿m gate length m.e.s.f.e.t.
Keywords
Schottky gate field effect transistors; semiconductor device models; MESFET; drain conductance nonlinearity; large signal equivalent circuits; mixer operation conditions; output nonlinearity; regions close to pinch-off; semiconductor device models; transconductance nonlinearity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790372
Filename
4243490
Link To Document