• DocumentCode
    952370
  • Title

    Dual-gate m.e.s.f.e.t. self-oscillating X-band mixers

  • Author

    Stahlmann, R. ; Tsironis, Christos ; Ponse, F. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    15
  • Issue
    17
  • fYear
    1979
  • Firstpage
    524
  • Lastpage
    526
  • Abstract
    GaAs dual-gate m.e.s.f.e.t.s have been successfully used as self-oscillating down-convertors in X-band. A single device replaces the preamplifier, mixer and local oscillator. The best conversion gain achieved by mixing from 10 GHz down to 1 GHz was 12 dB. The input (gate 1) to output (drain) port isolation amounted to 16 dB. Slug-tuner and `disc¿-resonator circuits were tested and showed comparable gain and noise performance. Best d.s.b. noise figures of 5.5 dB could be realised at an i.f. of 1 GHz with an associated conversion gain of 4 dB.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; mixers (circuits); solid-state microwave circuits; GaAs MESFET; X-band; down convertors; dual gate MESFET self oscillating mixers; microwave mixers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790378
  • Filename
    4243499