Title :
High-gain GaAs avalanche photodiodes with proton-implanted guard ring
Author :
Susa, Nobuhiko ; Kanbe, H¿¿ros¿¿h¿¿ ; Nishioka, Takashi ; Ohmachi, Yoshiro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; GaAs avalanche photodiodes; Zn diffusion; dark current; edge breakdown prevention; high gain photodiodes; leakage current; multiplication factor 8000; proton double implantation; proton implanted guard ring;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790385
