• DocumentCode
    952464
  • Title

    High-gain GaAs avalanche photodiodes with proton-implanted guard ring

  • Author

    Susa, Nobuhiko ; Kanbe, H¿¿ros¿¿h¿¿ ; Nishioka, Takashi ; Ohmachi, Yoshiro

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    15
  • Issue
    17
  • fYear
    1979
  • Firstpage
    535
  • Lastpage
    537
  • Abstract
    A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; GaAs avalanche photodiodes; Zn diffusion; dark current; edge breakdown prevention; high gain photodiodes; leakage current; multiplication factor 8000; proton double implantation; proton implanted guard ring;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790385
  • Filename
    4243506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952464