Application of a lambda /4-shifted DFB laser/electroabsorption modulator monolithically integrated light source to single-chip pulse generator with variable repetition rate

Author

Suzuki, Masatoshi ; Tanaka, Hideaki ; Matsushima, Yuichi

Author_Institution

KDD R&D Lab., Saitama, Japan

Volume

4

Issue

10

fYear

1992

Firstpage

1129

Lastpage

1132

Abstract

The authors have demonstrated the application of a 1.55- mu m lambda /4-shifted DFB laser/InGaAsP electroabsorption modulator monolithically integrated light source to a single-chip pulse generator with variable repetition rate for soliton transmission for the first time. Quasi-transform-limited pulses with a time-bandwidth product of 0.31 were successfully generated up to 8.6-GHz repetition rates by the sinusoidally driven integrated modulator having high modulation efficiency of 13 dB/V. No change of lasing wavelength was observed in the operation scheme of the integrated device as a pulse generator.<>

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light sources; optical communication equipment; optical solitons; semiconductor lasers; 1.55 micron; DFB laser; IR; InGaAsP; LDs; electroabsorption modulator; high modulation efficiency; lambda /4-shifted; laser diodes; lasing wavelength; monolithically integrated light source; operation scheme; quasi-transform-limited pulses; semiconductors; single-chip pulse generator; sinusoidally driven integrated modulator; soliton transmission; time-bandwidth product; variable repetition rate; Fiber lasers; Isolators; Laser mode locking; Laser stability; Optical fiber polarization; Optical modulation; Optical pulse generation; Optical waveguides; Pulse generation; Pulse modulation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163755

Filename

163755