Title :
Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Author :
Xu, J.P. ; Lai, P.T. ; Li, C.X. ; Zou, X. ; Chan, C.L.
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
fDate :
6/1/2006 12:00:00 AM
Abstract :
Wet-NO oxidation with or without wet NH3 pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOx interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeOx in water-containing atmosphere.
Keywords :
MOS capacitors; dielectric materials; germanium; germanium compounds; oxidation; semiconductor growth; Ge-GeON; electrical properties; gate dielectric; gate-leakage current; germanium MOS capacitors; interface-state; oxide-charge densities; wet-NO ambient; wet-NO oxidation; Annealing; Atmosphere; CMOS technology; Dielectric substrates; Germanium; Hafnium; MOS capacitors; MOSFETs; Oxidation; Surface treatment; Ge MOS capacitors; GeON; wet-NO oxidation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.874124
