Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Author

Xu, J.P. ; Lai, P.T. ; Li, C.X. ; Zou, X. ; Chan, C.L.

Author_Institution

Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

439

Lastpage

441

Abstract

Wet-NO oxidation with or without wet NH₃ pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO_x interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeO_x in water-containing atmosphere.

Keywords

MOS capacitors; dielectric materials; germanium; germanium compounds; oxidation; semiconductor growth; Ge-GeON; electrical properties; gate dielectric; gate-leakage current; germanium MOS capacitors; interface-state; oxide-charge densities; wet-NO ambient; wet-NO oxidation; Annealing; Atmosphere; CMOS technology; Dielectric substrates; Germanium; Hafnium; MOS capacitors; MOSFETs; Oxidation; Surface treatment; Ge MOS capacitors; GeON; wet-NO oxidation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.874124

Filename

1637550