Title :
Sb-Se-based phase-change memory device with lower power and higher speed operations
Author :
Sung-Min Yoon ; Nam-Yeal Lee ; Sang-Ouk Ryu ; Kyu-Jeong Choi ; Park, Y.-S. ; Seung-Yun Lee ; Byoung-Gon Yu ; Myung-Jin Kang ; Se-Young Choi ; Wuttig, M.
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
6/1/2006 12:00:00 AM
Abstract :
A phase-change material of Sb/sub 65/Se/sub 35/ was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using Sb/sub 65/Se/sub 35/ showed a good electrical threshold switching characteristic in the dc current-voltage (I-V) measurement. The programming time for set operation of the memory device decreased from 1 μs to 250 ns when Sb/sub 65/Se/sub 35/ was introduced in place of the conventionally employed Ge2Sb2Te5 (GST). The reset current of Sb/sub 65/Se/sub 35/ device also dramatically reduced from 15 mA to 1.6 mA, compared with that of GST device. These results are attributed to the low melting temperature and high crystallization speed of Sb/sub 65/Se/sub 35/ and will contribute to lower power and higher speed operations of a phase-change nonvolatile memory.
Keywords :
antimony alloys; germanium compounds; low-power electronics; phase change materials; random-access storage; selenium alloys; 1 mus; 15 to 1.6 mA; 250 ns; Ge/sub 2/Sb/sub 2/Te/sub 5/; Sb/sub 65/Se/sub 35/; dc current-voltage measurement; electrical threshold switching characteristic; high crystallization speed; low melting temperature; nonvolatile memory applications; phase-change materials; phase-change memory device; Crystalline materials; Crystallization; Fabrication; Nonvolatile memory; Phase change memory; Phase change random access memory; Plasma applications; Plasma chemistry; Tellurium; Temperature; Nonvolatile memory; Sb–Se alloy; phase transition; phase-change random access memory (PRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.874130
