DocumentCode :
952637
Title :
Ion-Implantation Technology and Device Applications
Author :
Comas, J.
Author_Institution :
Naval Research Laboratory, Washington, D.C.
Volume :
10
Issue :
4
fYear :
1974
fDate :
12/1/1974 12:00:00 AM
Firstpage :
234
Lastpage :
239
Abstract :
The introduction of impurity atoms into a surface by means of ion implantation is a well established technique in the semiconductor field. The main advantages of ion-implantation doping are its high controllability, uniformity, and reproducibility. Increasing applications, coupled with the development and availability of commercial equipment, has resulted in the use of the implantation technology in most major semiconductor processing facilities. Discussed in this review paper are: the ion-implantation process; standard ionimplantation equipment and operating parameters; and applications in device structures.
Keywords :
Ion implantation; Annealing; Atomic layer deposition; Controllability; Doping profiles; Fabrication; Ion implantation; Semiconductor device doping; Semiconductor impurities; Solids; Temperature;
fLanguage :
English
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0361-1000
Type :
jour
DOI :
10.1109/TPHP.1974.1134869
Filename :
1134869
Link To Document :
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