Title :
Ku- and K-band internally matched high-power GaAs f.e.t. amplifiers
Author :
Sone, Jun´ichi ; Takayama, Yoichiro
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Internal-matching techniques, using lumped-element capacitors fabricated on high dielectric ceramics, have been developed for high power GaAs f.e.t.s in Ku- and K-bands. The developed internally matched high-power f.e.t. amplifier modules have exhibited 1.9 W power output with 4 dB associated gain at 14 GHz and 1.25 W power output with 3 dB associated gain at 18 GHz.
Keywords :
field effect transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; 1.25 W power output; 1.9 W power output; 14 GHz; 18 GHz; K-band; Ku band; dielectric ceramics; high power GaAs FET amplifiers; internal matching techniques; lumped element capacitors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790404
