• DocumentCode
    952666
  • Title

    HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

  • Author

    Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    27
  • Issue
    6
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    454
  • Lastpage
    456
  • Abstract
    The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
  • Keywords
    MOSFET; VLSI; cryogenic electronics; hafnium compounds; rapid thermal annealing; ytterbium compounds; 1.7 nm; 4.1 eV; 600 C; HfAlON; MOSFET; YbSi; electron mobility; rapid thermal annealing; very large scale integration fabrication; Atherosclerosis; CMOS technology; Dielectrics; Electron mobility; Hafnium oxide; MOSFET circuits; Rapid thermal annealing; Silicidation; Silicides; Ytterbium; HfAlON; MOSFET; YbSi;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.874778
  • Filename
    1637555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952666