DocumentCode
952676
Title
Degradation-free MOS image sensor with photonic crystal color filter
Author
Inaba, Yuichi ; Kasano, Masahiro ; Tanaka, Keisuke ; Yamaguchi, Takumi
Author_Institution
Semicond. Devices Res. Center, Semicond. Co. Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
Volume
27
Issue
6
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
457
Lastpage
459
Abstract
This letter demonstrates a long-term reliable MOS image sensor equipped with a novel photonic crystal color filter (PC-CF). PCs are periodically structured dielectric media, generally possessing a photonic band gap. In the newly developed PC-CF, it is clarified that the desirable spectral property, i.e., peak wavelength and spectral passband, can be achieved by modifying the thicknesses of the defect layers, which act just like a "defect" in a PC. The spectral characteristics with the peak wavelengths at 450 (blue), at 530 (green), and at 610 nm (red) are realized in this letter. Moreover, the fabricated image sensor guarantees high reliability of longer than 200 000 h and heat resistance of above 300 °C.
Keywords
MOS integrated circuits; image sensors; optical filters; photonic band gap; photonic crystals; 450 to 610 nm; MOS image sensor; dielectric media; photonic band gap; photonic crystal color filter; Band pass filters; Degradation; Dielectrics; Image sensors; Optical filters; Passband; Personal communication networks; Photonic band gap; Photonic crystals; Resistance heating; Color filter (CF); MOS image sensor; dielectric layer; photonic crystal (PC);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.874126
Filename
1637556
Link To Document