• DocumentCode
    952676
  • Title

    Degradation-free MOS image sensor with photonic crystal color filter

  • Author

    Inaba, Yuichi ; Kasano, Masahiro ; Tanaka, Keisuke ; Yamaguchi, Takumi

  • Author_Institution
    Semicond. Devices Res. Center, Semicond. Co. Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
  • Volume
    27
  • Issue
    6
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    457
  • Lastpage
    459
  • Abstract
    This letter demonstrates a long-term reliable MOS image sensor equipped with a novel photonic crystal color filter (PC-CF). PCs are periodically structured dielectric media, generally possessing a photonic band gap. In the newly developed PC-CF, it is clarified that the desirable spectral property, i.e., peak wavelength and spectral passband, can be achieved by modifying the thicknesses of the defect layers, which act just like a "defect" in a PC. The spectral characteristics with the peak wavelengths at 450 (blue), at 530 (green), and at 610 nm (red) are realized in this letter. Moreover, the fabricated image sensor guarantees high reliability of longer than 200 000 h and heat resistance of above 300 °C.
  • Keywords
    MOS integrated circuits; image sensors; optical filters; photonic band gap; photonic crystals; 450 to 610 nm; MOS image sensor; dielectric media; photonic band gap; photonic crystal color filter; Band pass filters; Degradation; Dielectrics; Image sensors; Optical filters; Passband; Personal communication networks; Photonic band gap; Photonic crystals; Resistance heating; Color filter (CF); MOS image sensor; dielectric layer; photonic crystal (PC);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.874126
  • Filename
    1637556