Title :
Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels
Author :
Hållstedt, J. ; von Haartman, M. ; Hellström, P.E. ; Östling, M. ; Radamsson, H.H.
Author_Institution :
Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Kista, Sweden
fDate :
6/1/2006 12:00:00 AM
Abstract :
The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is ∼ 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; silicon compounds; silicon-on-insulator; substrates; MOSFET; SIMOX substrates; SiGe; SiGeC; UNIBOND substrates; hole mobility; silicon-on-insulator; Boron; CMOS technology; Doping profiles; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; Scattering; Silicon germanium; Silicon on insulator technology; Fully depleted (FD); MOSFETs; SiGe; SiGeC; heterostructure; mobility; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.874763
