Title :
Alloyed planar diodes in indium antimonide
Author :
Riedling, K. ; Olcaytug, F. ; Fallmann, W.
Author_Institution :
Technische Universitaet Wien, Institut fuer Allgemeine Elektrotechnik, Vienna, Austria
Abstract :
A low-temperature planar technology for InSb is presented that is suitable for maintaining high carrier mobilities. Thin film contacts made of evaporated indium and electrolytically deposited cadmium were alloyed under stearic acid using silicon nitride as a mask layer. Process temperatures did not exceed 250°C.
Keywords :
III-V semiconductors; carrier mobility; semiconductor diodes; III-V semiconductors; InSb; alloyed planar diodes; high carrier mobilities; low temperature planar technology; process temperature 250 degrees C; thin film contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790411
