• DocumentCode
    952732
  • Title

    Alloyed planar diodes in indium antimonide

  • Author

    Riedling, K. ; Olcaytug, F. ; Fallmann, W.

  • Author_Institution
    Technische Universitaet Wien, Institut fuer Allgemeine Elektrotechnik, Vienna, Austria
  • Volume
    15
  • Issue
    18
  • fYear
    1979
  • Firstpage
    572
  • Lastpage
    573
  • Abstract
    A low-temperature planar technology for InSb is presented that is suitable for maintaining high carrier mobilities. Thin film contacts made of evaporated indium and electrolytically deposited cadmium were alloyed under stearic acid using silicon nitride as a mask layer. Process temperatures did not exceed 250°C.
  • Keywords
    III-V semiconductors; carrier mobility; semiconductor diodes; III-V semiconductors; InSb; alloyed planar diodes; high carrier mobilities; low temperature planar technology; process temperature 250 degrees C; thin film contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790411
  • Filename
    4243541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952732