• DocumentCode
    952761
  • Title

    Ion-implanted GaAs X-band power f.e.t.s

  • Author

    Doerbeck, F.H. ; Macksey, H.M. ; Brehm, G.E. ; Frensley, W.R.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
  • Volume
    15
  • Issue
    18
  • fYear
    1979
  • Firstpage
    576
  • Lastpage
    578
  • Abstract
    Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices.
  • Keywords
    field effect transistors; power transistors; solid-state microwave devices; 10 GHz; GaAs; X-band; ion implantation; microwave devices; performance; power FET; proximity annealing technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790414
  • Filename
    4243544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952761