• DocumentCode
    952818
  • Title

    Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application

  • Author

    Yu, Xiongfei ; Yu, Mingbin ; Zhu, Chunxiang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    27
  • Issue
    6
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    498
  • Lastpage
    501
  • Abstract
    A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C, low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application.
  • Keywords
    CMOS integrated circuits; electron mobility; hafnium compounds; high-k dielectric thin films; leakage currents; low-power electronics; silicon compounds; tantalum compounds; HfTaON-SiO2; LSTP CMOS application; MOSFET; gate stack; high mobility; high-k gate dielectric; hole mobility; interface-state density; low leakage current; low-standby-power application; metal gate; superior electron mobility; thermal stability; Annealing; Buffer layers; Crystallization; Dielectrics; Hafnium; Leakage current; Oxidation; Plasma temperature; Substrates; Thermal stability; High-; MOSFETs; interface-state density; metal gate; mobility; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.875722
  • Filename
    1637569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952818