DocumentCode :
952829
Title :
Thin Film Capacitor Parameter Studies
Author :
Schenkel, F.W.
Author_Institution :
App. Phys. Lab., Silver Spring
Volume :
11
Issue :
2
fYear :
1964
fDate :
6/1/1964 12:00:00 AM
Firstpage :
194
Lastpage :
204
Abstract :
A discussion is presented relating the electrical, optical and physical parameters of thin film capacitors. A study of silicon monoxide dielectric films has been conducted. Both the electrical and optical characteristics were investigated in a series of planned experiments. A relationship between dielectric constant, refractive index and the thin film vacuum deposition parameters of the dielectric films has been established. The results of these experiments have helped facilitate the fabrication of more stable and reliable components. The effects of component annealing are presented. Proper heat treatment of the device has yielded improved stability and reduced the dissipation of limited available power. The control instrumentation for the vacuum deposition of thin films is discussed. The optical measuring techniques employed to obtain refractive index and dielectric constant shall be presented. Both multiple beam and two beam interferometry have been utilized in these measurements.
Keywords :
Capacitors; Dielectric constant; Dielectric films; Dielectric thin films; Optical films; Optical interferometry; Optical refraction; Optical variables control; Refractive index; Transistors;
fLanguage :
English
Journal_Title :
Component Parts, IEEE Transactions on
Publisher :
ieee
ISSN :
0097-6601
Type :
jour
DOI :
10.1109/TCP.1964.1134978
Filename :
1134978
Link To Document :
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