DocumentCode
952855
Title
n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
Author
Kawakami, Tsuyoshi ; Okamura, Masamichi
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
15
Issue
23
fYear
1979
Firstpage
743
Abstract
InP m.i.s.f.e.t.s using Fe-doped semi-insulating material surface have been fabricated. The devices, composed of sulphur-diffused n-type source and drain and c.v.d. Al2O3 gate insulator, exhibited n-channel normally-off behaviour and a source drain capacitance two orders of magnitude smaller than that of p-InP m.i.s.f.e.t.s with the same dimensions.
Keywords
III-V semiconductors; indium compounds; insulated gate field effect transistors; Al2O3 gate insulator; InP/Al2O3 MISFETs; N-channel formation; low source drain capacitance; semi-insulating InP surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790531
Filename
4243558
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