Title :
Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs
Author :
Giusi, G. ; Simoen, E. ; Eneman, G. ; Verheyen, P. ; Crupi, F. ; De Meyer, K. ; Claeys, C. ; Ciofi, C.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
6/1/2006 12:00:00 AM
Abstract :
The low-frequency noise behavior of locally strained pMOSFETs with a 7HfO2/TiN gate stack is reported. Different ways of compressive-strain engineering have been compared: a Si3N4 cap layer, SiGe source/drain (S/D) regions, or the combination of both. It is shown that the use of a cap layer does not degrade the 1/f noise magnitude, while an increase of this parameter is found for SiGe S/D devices. This increase is ascribed to the creation of additional traps in the high-k oxide by the SiGe S/D processing. The effect appears to be independent of the germanium content in the range studied (15%-25%). Another conclusion is that no direct correlation has been observed here between the applied stress and the noise magnitude.
Keywords :
1/f noise; Ge-Si alloys; MOSFET; hafnium compounds; silicon compounds; titanium compounds; HfO2-TiN; Si3N4; SiGe; cap layer; compressive strain engineering; gate stack pMOSFET; high-k oxide; low frequency 1/f noise; source/drain region; Degradation; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFETs; Silicon germanium; Stress; Tin; Local strain; low-frequency (LF) noise; number fluctuations; pMOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.875758
