pMOSFET with 200% mobility enhancement induced by multiple stressors

Author

Washington, Lori ; Nouri, Faran ; Thirupapuliyur, Sunderraj ; Eneman, Geert ; Verheyen, Peter ; Moroz, Victor ; Smith, Lee ; Xu, Xiaopeng ; Kawaguchi, Mark ; Huang, T. ; Ahmed, Khaled ; Balseanu, Miheala ; Xia, Li-Qun ; Shen, Meihua ; Kim, Yihwan ; Rooyac

Author_Institution

Appl. Mater. Inc., Sunnyvale, CA, USA

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

511

Lastpage

513

Abstract

Recessed Si_0.8Ge_0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors´ knowledge. This letter demonstrates that a drive-current improvement from recessed Si_0.8Ge_0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.

Keywords

Ge-Si alloys; MOSFET; hole mobility; Si_0.8Ge_0.2; SiGe; compressive contact etch-stop layer; hole mobility; mobility enhancement; multiple stressor; pMOSFET; source/drain; Additives; Art; Compressive stress; Etching; Geometry; Germanium silicon alloys; MOSFET circuits; Microelectronics; Silicon germanium; Solid modeling; MOSFET; SiGe; strained-silicon; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.875766

Filename

1637573