DocumentCode
952899
Title
Gettering of epitaxial gallium phosphide using phosphosilicate glass
Author
Wessels, Bruce W.
Author_Institution
General Electric Company, Corporate Research & Development Center, Schenectady, USA
Volume
15
Issue
23
fYear
1979
Firstpage
748
Lastpage
749
Abstract
Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.
Keywords
III-V semiconductors; carrier lifetime; electroluminescence; gallium compounds; getters; light emitting diodes; phosphosilicate glasses; vapour phase epitaxial growth; GaP epitaxial layers gettering; VPE GaP; carrier lifetime; electroluminescent efficiency; gettering using phosphosilicate glass; minority carrier lifetime; yellow LEDs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790535
Filename
4243567
Link To Document