Title :
Gettering of epitaxial gallium phosphide using phosphosilicate glass
Author :
Wessels, Bruce W.
Author_Institution :
General Electric Company, Corporate Research & Development Center, Schenectady, USA
Abstract :
Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.
Keywords :
III-V semiconductors; carrier lifetime; electroluminescence; gallium compounds; getters; light emitting diodes; phosphosilicate glasses; vapour phase epitaxial growth; GaP epitaxial layers gettering; VPE GaP; carrier lifetime; electroluminescent efficiency; gettering using phosphosilicate glass; minority carrier lifetime; yellow LEDs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790535
