Incorporation of bromine into Si-SiO2 interfaces and effects on interface state distribution

An experimental study has been made of the effects of bromine treatment of (111) silicon surfaces before thermal oxidation. A sharp peak in the Si-SiO2 interface state distribution at Ev+ 0.15 eV and an overall increase in density by as much as two orders of magnitude has been observed in m.o.s. structures with SiO2 thickness of ¿ 100 Å. In a.c. conductance against bias voltage measurements, two conductance peaks are observed rather than the customary single peak.