Title :
Depletion-type m.o.s.f.e.t.s for low-temperature operation
Author :
Kawashima, Mitsumasa ; Kanamori, Mitsuru ; Matsumura, Mieko
Author_Institution :
Tokyo Institute of Technology, Faculty of Engineering, Tokyo, Japan
Abstract :
Taking carrier freeze-out into account|a novel structure for depletion-type m.o.s.f.e.t.s suitable for low-temperature operation is proposed. Its channel consists of two regions; a relatively wide, low-impurity-density region and a relatively narrow, high-impurity-density region. It is estimated that the proposed structure has more square-law-like load character istics and higher current density than conventional ones.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor device models; 77K operation; LSI; carrier freeze out; depletion type MOSFETs; low temperature operation; two region channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790542
