• DocumentCode
    952988
  • Title

    Depletion-type m.o.s.f.e.t.s for low-temperature operation

  • Author

    Kawashima, Mitsumasa ; Kanamori, Mitsuru ; Matsumura, Mieko

  • Author_Institution
    Tokyo Institute of Technology, Faculty of Engineering, Tokyo, Japan
  • Volume
    15
  • Issue
    23
  • fYear
    1979
  • Firstpage
    759
  • Lastpage
    760
  • Abstract
    Taking carrier freeze-out into account|a novel structure for depletion-type m.o.s.f.e.t.s suitable for low-temperature operation is proposed. Its channel consists of two regions; a relatively wide, low-impurity-density region and a relatively narrow, high-impurity-density region. It is estimated that the proposed structure has more square-law-like load character istics and higher current density than conventional ones.
  • Keywords
    field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor device models; 77K operation; LSI; carrier freeze out; depletion type MOSFETs; low temperature operation; two region channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790542
  • Filename
    4243609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952988