Title :
Interfacial polarisation in Al-Y2O3-SiO2-Si capacitor
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.
Keywords :
aluminium; capacitors; dielectric polarisation; dielectric relaxation; dielectric thin films; elemental semiconductors; interface phenomena; metal-insulator-semiconductor structures; permittivity; silicon; silicon compounds; yttrium compounds; Al-Y 2O 3-SiO 2-Si; Y 2O 3 thin film; Y 2O 3/SiO 2 double-layer model; composite capacitor; dielectric relaxation time constants; frequency independence; interfacial polarization; permittivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931115
