Title :
alpha factor improvements in high-speed p doped In0.35Ga 0.65As/GaAs MQW lasers
Author :
Schofelder, A. ; Weisser, Stefan ; Ralston, J.D. ; Rosenzweig, J.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
Abstract :
The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, alpha , resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The alpha factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding alpha 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al0.25Ga0.75As and p-doped strained In0.35Ga0.65As/GaAs devices, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; refractive index; semiconductor lasers; spectral line breadth; CW bias current; GaAs-Al 0.25Ga 0.75As; In 0.35Ga 0.65As-GaAs; MQW lasers; alpha factor; alpha factor improvements; gain; high-speed p doped In 0.35Ga 0.65As/GaAs; linewidth enhancement factor; multiquantum well lasers; p-doping; refractive index; strain; threshold lasing wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931121
